金属基带的连续非接触式电化学抛光  被引量:5

Non-contact and Continuous Electrochemical Polishing of the Metal Strip

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作  者:高永超 程好 杨淑平 庄维伟 蔡渊 张国栋 

机构地区:[1]苏州新材料研究所有限公司,江苏苏州215125

出  处:《表面技术》2014年第2期105-108,155,共5页Surface Technology

摘  要:目的研发一种适合工业生产连续带材的非接触式电化学抛光方法。方法采用以磷酸.硫酸为主要氧化剂的环保型电化学抛光液对金属基带进行电化学抛光,研究阳极电流密度(JA)、电解液温度(t)、基带与电极间的距离(L)和走带速度(v)对基带表面粗糙度的影响,优化抛光工艺条件。结果优化的工艺条件如下:为1500~2500A/m^2t为40~80℃,三为4~12mm,v为0.5~1.8m/min。在此工艺条件下进行电化学抛光,极为有效地降低了金属基带的表面粗糙度.光亮度达到镜面状态,原子力显微镜测试5μm×5μm范围内的表面平均粗糙度值低于1.0nm。结论该抛光工艺实现了千米级基带的连续性抛光,达到工业化生产要求。Objective To develop a non-contact electrochemical polishing method which is suitable for producing continuous metal strip in industry. Methods Using environment friendly phosphoric acid-sulfuric acid as the main antioxidant electrochemical polishing solution, the influences of the anodic current density ( Jn ), the electrolyte temperature ( t), the distance between elec- trodes and metal strip (L), the tape speed(v) on the surface roughness of the metal strip were studied, and the polishing process conditions were optimized. Results The optimized process conditions are as following: JA: 1500 -2500 A/m^2, t: 40 - 80 ℃, L: 4 - 12 mm, v: 0.5 - 1.8 m/min. The results showed that the electrochemical polishing process could effectively reduce the surface roughness of the metal strip under the optimized conditions, the brightness of the polished tape could reach the mirror state, the av- erage surface roughness Ra value was less than 1.0 nm as tested by AFM around the 5 p.mx5 p.m micron. Conclusion The polis- hing process achieved the continuous polishing of metal strip at kilometer level and met the requirements for industrial production.

关 键 词:非接触式 电化学抛光 工艺条件 平均粗糙度 

分 类 号:TG175[金属学及工艺—金属表面处理]

 

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