Al_2O_3对晶硅电池的表面钝化研究  

SURFACE PASSIVATION REALIZED BY Al_2O_3 FOR CRYSTALLINE SILICON SOLAR CELLS

作　　者：孟彦龙[1] 贾锐[1] 孙昀[1] 王仕建[1] 邢钊[1] 丁武昌[1] 李昊峰[1] 陈晨[1] 孙兵[1] 李尚卿 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]山东华圣瑞德市政工程有限公司,济宁272000

出　　处：《太阳能学报》2014年第3期492-497,共6页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(11104319;51172268);国家重点基础研究发展(973)计划(2009CB939703);中科院太阳能行动计划

摘　　要：采用原子层沉积(Atomic layer Deposition,ALD)工艺制备了Al2O3,并对晶硅电池的表面进行钝化。通过与采用传统热氧化SiO2钝化的p型晶硅电池相比较,采用Al2O3钝化后晶硅太阳电池开路电压可提高5%。在未经制绒处理的情况下,短路电流可提高17.4%。通过对不同钝化技术下晶硅电池少子寿命变化以及发射区方阻变化的分析,采用原子层沉积工艺制备的Al2O3不仅能对晶硅电池表面实现良好钝化,还可避免高温氧化工艺对电池发射区的影响。Al2O3 deposited by atomic layer deposition was used onto the surface of p-type crystal silicon solar cells for the purpose of surface passivation. By comparing with p-type solar cells which passivated by conventional thermal SiO2, the open circuit voltage of cells passivated by Al2O3 is enhanced without any surface texture process. Furthermore, application 5% and the short circuit current is enhanced by 17.4% of Al2O3 passivation can avoid the damage on emitter which occurs in the process of oxidation in high temperature. At last, excellent surface passivating ability of Al2O3 which deposited by atomic layer deposition was demonstrated in this paper.

关 键 词：太阳电池 AL2O3 表面钝化 

分 类 号：TN2[电子电信—物理电子学]