退火温度对Ti/IrO_2-CeO_2电极组织结构与电容性能的影响  

Effect of Annealing Temperature on Microstructure and Capacitive Performance of Ti/IrO_2-CeO_2 Electrodes

作　　者：娄长影 朱君秋[2] 邵艳群[1] 马晓磊[1] 唐电[1] 

机构地区：[1]福州大学材料科学与工程学院,福建福州350108 [2]厦门理工学院材料科学与工程学院,福建厦门361024

出　　处：《中国稀土学报》2014年第2期205-212,共8页Journal of the Chinese Society of Rare Earths

基　　金：国家自然科学基金项目(11374053)资助

摘　　要：采用热分解法制备了钛基IrO2-CeO2二元氧化物涂层电极（Ti／IrO2-CeO2）。通过X射线荧光衍射（XRD），（SEM），循环伏安和交流阻抗等方法研究了退火温度对Ti／IrO2-CeO2涂层电极组织结构与电容性能的影响。结果表明，随退火温度升高，IrO2-CeO2涂层由非晶态向晶态转变，晶化程度逐渐升高；在460～480℃高温退火，IrO2-CeO2涂层中仍含有约28％的非晶态组织，说明CeO2有抑制IrO2晶化的作用。当退火温度为380℃时，电极的晶化程度约为25％，比电容达到最大值，并具有良好的循环稳定性。电极的电荷转移电阻取决于电极的晶化程度，随退火温度升高呈阶梯下降趋势。Ti/IrO2-CeO2 electrodes were prepared by thermal decomposition at various annealing temperatures. The influence of the annealing temperature on microstructure, morphology, and capacitive performance of the Ti/IrO2- CeO2 electrodes was investigated by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, cyclic voltammetry and electrochemical impedance spectroscopy. The annealing temperature was found to play a significant role in affecting the microstructure and capacitive performance. The amorphous structure transformed to crystalline with increasing annealing temperature. The structure with about 28% amorphous could be still existed at 460-480℃, which indicated that CeO2 could inhibit crystallization of the IrO2. The Ti/IrO2-CeO2 electrodes annealed at 380 ℃ had the maximum specific capacitance combining with excellent cycling behavior, and the crystallization degree of the Ti/IrO2-CeO2 electrodes was about 25%. Charge transfer resistance of the electrode depended on the degree of crystallization of the electrodes, showing a ladder fall with increasing annealing temperature.

关 键 词：晶化程度 超级电容器 IrO2-CeO2 退火 稀土 

分 类 号：TM531[电气工程—电器]