有机单体3-phenyl-1-ureidonitrile薄膜的超高密度信息存储  

ULTRAHIGH-DENSITY DATA STORAGE ON AN ORGANIC MONOMER 3-PHENYL-1-UREIDONITRILE THIN FILM

作　　者：时东霞[1] 宋延林[2] 张昊旭[1] 解思深[1] 庞世瑾[1] 高鸿钧[1] 

机构地区：[1]中国科学院物理研究所凝聚态物理中心真空物理开放实验室 [2]中国科学院化学研究所分子科学中心,北京100080

出　　处：《物理学报》2001年第2期361-364,共4页Acta Physica Sinica

基　　金：国家自然科学基金!重大项目子课题 (批准号 :6 9890 2 2 3)资助的课题

摘　　要：采用扫描隧道显微镜 (STM )在 3 phenyl 1 ureidonitrile (PUN)有机单体薄膜上进行了超高密度信息存储的研究 .通过在STM针尖和高定向裂解石墨 (HOPG)衬底之间施加一系列的电压脉冲 ,在薄膜上写入了一个稳定的 5× 6信息点阵 ,信息点的大小是 0 8nm .电流 电压 (I V)曲线表明 ,施加电压脉冲前后薄膜的导电性质发生了变化 .信息点的写入机制可能是强电场作用下引发的PUN分子的局域聚合 ,从而导致薄膜由高电阻态向低电阻态转变 .Ultrahigh-density data storage on a 3-phenyl-1-ureidonitrile (PUN) thin film was performed using a scanning tunneling microscope. The recorded marks of 0.8 nm in diameter were obtained when voltage pulses of 4 V for 10ms were applied between the STM tip and highly ordered pyrolytic graphite substrate. The current-voltage relations at the local regions of the films indicate that the recorded region is conductive and the unrecorded region is in a high impedance state. A possible mechanism of this data storage was suggested and discussed.

关 键 词：超高密度信息存储 有薄膜 扫描隧道显微镜 微观电学性质 

分 类 号：O484[理学—固体物理]