硼掺杂对Ba2TiSi2O8玻璃陶瓷结构与介电性能的影响  

Influences of boron on structure and dielectric performance of Ba_2TiSi_2O_8 glass-ceramics

作　　者：刘贵山[1] 沈晓月[1] 方仁德 黄贝[1] 杨兰贺[1] 蔡二荣 胡志强[1] 郝洪顺[1] 

机构地区：[1]大连工业大学辽宁省新材料与材料改性重点实验室,辽宁大连116034

出　　处：《大连工业大学学报》2014年第2期131-134,共4页Journal of Dalian Polytechnic University

基　　金：辽宁省教育厅重点实验室科技项目(2008S017)

摘　　要：采用溶胶凝胶法合成了掺杂硼的Ba2TiSi2O8(BTS-B)粉体,并将粉体压成样品在同一马弗炉分别在900、950、1 000、1 050、1 100和1 150℃下烧结成瓷。并且对陶瓷的真密度和径向收缩率进行测试以确定最佳烧结温度。实验结果表明,掺硼的BTS陶瓷的最佳烧结温度为1 050℃;硼的引入并没有影响BTS陶瓷的主晶相;硼的存在降低陶瓷的烧结温度;陶瓷的介电常数和介质损耗随着硼含量的增加呈现先增大后减小的趋势,BTS-B1.5的介电常数最大(18左右)。B-doped Ba2 TiSi2 08 900, 950, 1 000, 1 050, 1 powders was prepared by the sol-gel and pressed in Muffle furnace at 100 and 1 150℃ respectively. The density and biradial shrinking percentage were compared after the glass-ceramics were formatted. The optimum sintering temperature of B-doped BaeTiSi2O8 is at 1 050 ℃. The addition of B did not change the main phase of Ba2TiSi2O8 glass-ceramics but reduced the sintering temperature. Both dielectric constant and dielectric loss of Ba2 TiSi2 O8 was increased first and then decreased with the increasing B additive. The dielectric property of the BTS-B1.5 is maximize （about 18）.

关 键 词：玻璃陶瓷 钡钛硅石 硼掺杂 介电性能 

分 类 号：TB302.1[一般工业技术—材料科学与工程]