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机构地区:[1]华侨大学材料物理化学研究所,福建泉州362011 [2]日本岐阜大学工学部应用化学科
出 处:《催化学报》2001年第1期74-76,共3页
摘 要:Uniform and crack free TiO 2 thin films with highly dispersed platinum were prepared from i PrOH TTIP DEA H 2O system containing H 2PtCl 6·6H 2O as metal source by sol gel method. The microstructure and morphology of the films were characterized by TEM and XRD respectively. It was found that the Pt particles dispersed in the films and had a homogeneous distribution in the shape of sphere with an average size of about 5 nm. This study also showed that the doping with few percent of Pt resulted in the formation of pure rutile phase at a temperature as low as 550 ℃, whereas the same pure phase was formed at the temperature higher than 650 ℃ in TiO 2 or Au/TiO 2 thin films.Uniform and crack free TiO 2 thin films with highly dispersed platinum were prepared from i PrOH TTIP DEA H 2O system containing H 2PtCl 6·6H 2O as metal source by sol gel method. The microstructure and morphology of the films were characterized by TEM and XRD respectively. It was found that the Pt particles dispersed in the films and had a homogeneous distribution in the shape of sphere with an average size of about 5 nm. This study also showed that the doping with few percent of Pt resulted in the formation of pure rutile phase at a temperature as low as 550 ℃, whereas the same pure phase was formed at the temperature higher than 650 ℃ in TiO 2 or Au/TiO 2 thin films.
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