人造石英晶体电清洗过程中的直流伏安特性  

DC Current-Voltage Characteristics of Cultured Quartz Crystal During the Process of Sweeping

作　　者：尚继武[1] 刘巨澜[1] 刘小丰[1] 庞珍丽[1] 

机构地区：[1]烁光特晶科技有限公司,北京100018

出　　处：《人工晶体学报》2014年第3期565-568,共4页Journal of Synthetic Crystals

基　　金：北京市自然科学基金(2122021)

摘　　要：研究了电清洗试验中人造水晶的伏安特性,分析了电清洗水晶的杂质含量和腐蚀隧道密度的变化。实验表明,在加压过程中电流出现先增后减再增的变化规律,分别对应杂质离子的浓度变化。电压稳定后电流逐渐减小。元素分析表明电清洗可以使Na+产生定向迁移,但对Al3+的含量没有影响。电清洗水晶的腐蚀隧道密度明显减小。DC current-voltage characteristics during the process of sweeping cultured quartz crystal was studied, and changes of the impurity content and etch-channel density were also reported. The results show that the current increases rapidly at first, then decreases, and then increases again as the voltage increasing. Elemental analysis reveals that the high voltage makes the Na＋ directional migration, while the Al3＋ content is insusceptible. Moreover, the etch-channel density reduced obviously in swept cultured quartz crystal.

关 键 词：人造石英晶体 电清洗 伏安特性 腐蚀隧道密度 

分 类 号：O77[理学—晶体学]