工艺参数对飞秒激光沉积硅基ZnO大面积均匀薄膜性能的影响  

Influence of Process Parameters on the Properties of Large Area Uniformity ZnO Thin Films Deposited on Silicon Substrate by Femtosecond Laser

作　　者：杨义发[1] 江超[1] 

机构地区：[1]湖北师范学院物理与电子科学学院,黄石435002

出　　处：《人工晶体学报》2014年第3期631-635,共5页Journal of Synthetic Crystals

基　　金：湖北省教育厅项目(B20112501)

摘　　要：研究了衬底温度、真空度、激光能量、激光脉冲频率及退火处理对飞秒激光制备硅基ZnO大面积均匀薄膜的结构和性能的影响。结果表明,当激光能量为1.5 mJ、脉冲频率为400 Hz、真空度为1.0 mPa、衬底温度为80℃时,所制备的薄膜质量最佳。薄膜呈高度c-轴取向,为典型的六方纤锌矿结构,晶粒沿垂直于衬底表面的方向生长;当衬底温度高于80℃时,随着温度的升高,c-轴取向度降低。80℃制备的薄膜在可见紫外区域透过率达98%,电阻率随温度升高而减小,退火后薄膜的透过率增大、电阻率升高。The effects intensity, laser pulse of experimental parameters ~equency and annealing such as substrate temperature, pressure of oxygen, laser treatment on the structure and properties of large area uniformity ZnO thin films by femtosecond laser deposition were studied. The resuhs show that c-axis- oriented ZnO films are obtained, and the optimized condition are the substrate temperature 80 ℃, laser energy 1.5 m J, the pressure of oxygen 1.0 mPa and the frequency of laser pulse at 400 Hz, respectively. The grains grow perpendicular to the substrate surface with hexagonal phase structure. When the substrate temperature exceed 80 ℃, the c-axis degree of orientation decreases as the temperature increasing. The transmittance of thin film prepared at 80 ℃ reached 98%, the resistivity increasing, the transmittance and resistivity of the thin film both increases decreased as the temperature after annealing.

关 键 词：飞秒激光 氧化锌 透过率 电阻率 

分 类 号：O484[理学—固体物理]