BiFe_(0.95)Mn_(0.05)O_3薄膜阻变效应的空间电荷限制电流机理分析  

Space-Charge-Limited Current Mechanism in Resistive Switching of BiFe_(0.95)Mn_(0.05)O_3 Thin Films

作　　者：罗劲明[1] 徐初东[2] 陈书汉[1] 

机构地区：[1]嘉应学院物理与光信息科技学院,梅州514015 [2]华南农业大学理学院,广州510642

出　　处：《材料导报》2014年第4期80-83,共4页Materials Reports

基　　金：国家自然科学基金(61308038);梅州市科学技术局与嘉应学院联合自然科学研究项目(2013KJM02)

摘　　要：研究了BiFe0.95Mn0.05O3薄膜器件的双极性阻变效应。通过对薄膜器件的电流电压曲线进行电导机制的拟合分析,发现在低阻态时其电流电压关系遵循欧姆定律,而在高阻态时则满足指数分布陷阱控制的空间电荷限制电流规律。同时,还研究了限制电流对双极性阻变效应的影响,结果表明通过调节限制电流值,可以改变薄膜内形成的导电丝粗细,从而得到不同的低阻态,实现薄膜器件的多态存储功能。在导电丝理论的基础上,利用指数分布陷阱控制的空间电荷限制电流机理对这一现象进行了详尽的阐述。Bipolar resistive switching characteristics of BiFeo. 9s Mno. 0s 03 thin films were investigated. The anal- ysis of current conduction demonstrates that trap-limited space-charge-limited current conduction and Ohmic conduc- tion are dominant in high resistance state and in low resistance state, respectively. Meanwhile, compliance current effect on bipolar resistive switching was also studied. The result reveals that the conductive filament created in thin films can be modified by controlling the compliance current, and as a result different resistance levels can be attained, indicating that the multilevel storage would be feasible. Based on the conductive filament theory, the trap-limited space-charge-limited current conduction mechanism has been used to explicate this phenomenon.

关 键 词：BiFe0 95Mn0 05O3 阻变效应 空间电荷限制电流 BiFe0 95 Mn0 05O3 

分 类 号：O482[理学—固体物理]