GaInP应力补偿层在InAs/GaAs量子点中的初步应用  

Application of GaInP Strain Compensation Layers in InAs/GaAs Quantum Dots

作　　者：白红艳[1] 肖祥江[1] 涂洁磊[1] 赵沛坤[1] 陈创业[1] 

机构地区：[1]云南师范大学太阳能研究所,教育部可再生能源材料先进技术与制备重点实验室,云南省农村能源工程重点实验室,昆明650092

出　　处：《材料导报》2014年第6期29-32,共4页Materials Reports

基　　金：云南省重点基金(2009CC012);云南省中青年学术技术带头人后备人才(2008PY054);长江学者和创新团队发展计划

摘　　要：利用金属有机化合物气相沉积（MOCVD）技术生长了双层InAs/GaAs量子点,并将GaInP作为应力补偿层引入到其中,采用原子力显微镜（AFM）对量子点的结构和生长质量进行了表征与分析.实验结果表明,应变补偿层的采用可有效改善第二层量子点质量：（1）面密度最高可达7.5×1010 cm-2,而没有应变补偿层的样品的面密度仅为5.8×1010 cm-2;（2）缺陷岛密度可从不采用应变补偿时的9.6×107 cm-2降低至2.8×107 cm-2;（3）量子点的均匀性和尺寸也明显改善.此外,不同应变补偿层厚度比较实验结果显示,厚度过高或过低的应变补偿层都不能起到很好的补偿作用,取1～3 nm之间为佳;不同GaInP补偿层组分的比较实验结果表明,Ga组分为0.566的样品补偿效果比0.606的样品更好.Two-stack InAs/GaAs quantum dot structures with GaInP strain compensation layers inserted were grown by metal organic chemical vapor deposition.The structure and quality of the quantum dots were investigated using atomic force microscopy.The results show that the quantum dots＇ quality of the second layer were improved by using strain compensation layer：（1）the surface dot density up to 7.5 × 1010 cm-2,which is significantly larger than the sample without strain compensation layer,5.8 × 1010 cm-2 ; （2） the defect island density reduce from 9.6 × 107 cm-2 to 2.8× 107 cm-2 ; （3）the uniformity and size of the quantum dots are also significantly improved.The influence of the thickness and the Ga concentration of the GaInP strain compensation layers is also discussed,it reveals that it can not play a very good role in compensating if the thickness is too thick or too thin,the optimum value is between 1 nm to 3 nm.And the sample with a Ga concentration of 0.566 is better than the sample of 0.606.

关 键 词：INAS量子点 GaInP应力补偿层 厚度 组分 

分 类 号：O484[理学—固体物理]