Mg_SiO_4:Cr^(3+)晶体的生长习性  

GROWTH HABITS OF Mg_2SiO_4:Cr^(3+) CRYSTAL

作　　者：夏海平[1] 潘佩聪[1] 胡兵[1] 邓佩珍[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《硅酸盐学报》1991年第4期324-330,共7页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金

摘　　要：分别沿a、b、c轴三种取向,用提拉法生长了Mg_2SiO_4:Cr^(3+)晶体;用X射线和光学方法测定了各个显露面,确定其密勒指数。利用修改的Hartman理论,计算了几个重要显露面的吸附能。根据吸附能大小判断了显露面的顺序,理论结果与实验结果相符。Mg_2SiO_4:Cr^(3+) crystals have been grown along the a, b and c-axis respectively by Czochralski technique. The orientations of all developing facets in the crystals and their Miller indices have been determined by means of X-ray and optical method. The relation between morphology of Mg_2SiO_4:Cr^(3+) crystal and it's structure is explained with the modified Hartman's theory.

关 键 词：硅酸镁 铬 晶体 吸附能 显露面 

分 类 号：O614.22[理学—无机化学]