Impact of CHFa Plasma Treatment on A1GaN/GaN HEMTs Identified by Low-Temperature Measurement  

作　　者：DU Yan-Dong HAN Wei-Hua YAN Wei YANG Fu-Hua 

机构地区：[1]Engineering Research Center of Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2014年第4期189-192,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2010CB934104, and the National Natural Science Foundation of China under Grant No 61376069.

摘　　要：We investigate the impact of CHFa plasma treatment on the performance of AIGaN/GaN HEMT （F-HEMT） by a temperature-dependent measurement in the thermal range from 6 K to 295 K. Tlle temperature dependence of the transconductance characteristics in F-HEMT declares that the Coulomb scattering and the optical phonon scattering are effectively enhanced by the fluorine ions in the A1GaN layer. The fluorine ions not only provide immobile negative charges to deplete 2DEG, but also enhance the Schottky barrier height of the metal gate. Thermal activation of the carrier traps induced by CHF3 plasma for F-HEMT contributes to the negative shift of the threshold voltage by -3.4mV/℃ with the increasing temperature. The reverse gate-leakage current of F-HEMT is decreased by more than two-order magnitude in comparison with that of conventional A1GaN/GaN HEMT （C-HEMT） without fluorine ions.We investigate the impact of CHFa plasma treatment on the performance of AIGaN/GaN HEMT （F-HEMT） by a temperature-dependent measurement in the thermal range from 6 K to 295 K. Tlle temperature dependence of the transconductance characteristics in F-HEMT declares that the Coulomb scattering and the optical phonon scattering are effectively enhanced by the fluorine ions in the A1GaN layer. The fluorine ions not only provide immobile negative charges to deplete 2DEG, but also enhance the Schottky barrier height of the metal gate. Thermal activation of the carrier traps induced by CHF3 plasma for F-HEMT contributes to the negative shift of the threshold voltage by -3.4mV/℃ with the increasing temperature. The reverse gate-leakage current of F-HEMT is decreased by more than two-order magnitude in comparison with that of conventional A1GaN/GaN HEMT （C-HEMT） without fluorine ions.

分 类 号：TN386[电子电信—物理电子学] TG174.442[金属学及工艺—金属表面处理]