预退火对溶胶-凝胶法制备Cu_2ZnSnS_4薄膜性能的影响  

Influence of pre-annealing on properties of Cu_2ZnSnS_4 thin films prepared by sol-gel method

作　　者：华中[1] 孟祥成[1] 孙亚明[1] 王多[1] 张守琪[1] 

机构地区：[1]吉林师范大学功能材料物理与化学教育部重点实验室,吉林四平136000

出　　处：《电子元件与材料》2014年第5期21-23,共3页Electronic Components And Materials

基　　金：吉林师范大学研究生科研创新计划资助项目(No.2013005)

摘　　要：采用溶胶-凝胶法结合旋涂技术制备了Cu2ZnSnS4(CZTS)薄膜前驱体。将一部分前驱体在S气氛中于500℃硫化1 h,另一部分先在250℃预退火0.5 h后再在500℃硫化1 h。利用X射线衍射仪、扫描电子显微镜和紫外可见分光光度计等对所制CZTS薄膜的微观结构、表面形貌以及光学性能等进行了表征,研究了预退火对CZTS薄膜性能的影响。结果表明:经预退火制备的薄膜比未经预退火制备的薄膜更为纯净,表面更加致密,其禁带宽度(1.49 eV)更接近CZTS薄膜太阳能电池的最佳禁带宽度(1.50 eV)。Precursors of Cu2ZnSnS4 thin films were prepared by sol-gel method combining with spin-coating technique One part of the precursors was sulfurized at 500 ℃ for I h under S atmosphere, and the other part was first annealed at 250 ℃ for 0.5 h and then sulfurized at 500 ℃ for 1 h. The microstructures, surface morphologies and optical properities of the prepared CZTS films were investigated by X-ray diffraction, scanning election microscopy and UV-Vis spectrophotometer. The effects of pre-annealing on the properties of CZTS thin films was investigated. The results show that compared with the film obtained without pre-annealing, the CZTS film obtained through pre-annealing possesses purer phase and denser surface, meanwhile it＇s band gap （1.49 eV） is closer to the best band gap （1.50 eV） of CZTS thin film solar cells.

关 键 词：CZTS 溶胶-凝胶法 预退火 硫化 太阳能电池 禁带宽度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]