紫外光照下WO_3的H_2S气敏特性研究  

H_2S gas sensitivity of UV light activated WO_3 gas sensors

作　　者：余华梁[1] 李静玲[2] 吴一纯[3] 李玉良[1] 周赢武[1] 

机构地区：[1]闽江学院电子系,福建福州350108 [2]福建工程学院环境工程系,福建福州350108 [3]厦门大学能源学院,福建厦门361102

出　　处：《电子元件与材料》2014年第5期53-56,共4页Electronic Components And Materials

基　　金：福建省省属高校科研专项资助项目(No.JK2011039);福建省自然科学基金资助项目(No.2012D110;No.2013J05014);国家级大学生创新项目资助(No.201310395003)

摘　　要：以热氧化钨丝法制备的WO3纳米材料为基材制备了厚膜气敏元件,在常温、紫外光激发条件下实验测试了所制纯WO3气敏元件对不同体积分数的H2S气体的气敏特性曲线,探讨了元件对H2S的灵敏度与紫外光的辐射通量密度的依赖关系。结果表明,常温、无紫外光照下WO3气敏元件对H2S不敏感,而在常温及紫外光激发下WO3气敏元件对H2S的灵敏度显著增大,且随着紫外光辐射通量密度增加,元件对H2S的灵敏度先增大而后减小。The thick film gas sensors were prepared by using WO3 nano-materials that prepared by the method of thermal oxidation of tungsten. Under the condition of room temperature and UV excitation, gas sensing characteristic curves of the prepared pure WO3 gas sensors to H2S gas with different volume fractions were tested. Dependencies between sensitivity of WO3 gas sensors to H2S and UV radiant flux density were investigated. The results show that under the room temperature condition, the WO3 gas sensors are not sensitive to H2S without UV irradiation, while the WO3 gas sensors are significantly sensitive to H2S with UV excitation, and with the increase of UV radiant flux density, the sensitivity of gas sensors to H2S first increases and then decreases.

关 键 词：电子技术 H2S传感器 气敏性能 WO3 紫外光照 辐射通量密度 

分 类 号：TN304.9[电子电信—物理电子学]