脉冲激光辐照TiO_2材料损伤的数值计算  

Numerical Analysis of Pulse Laser Damage for TiO_2

作　　者：刘中洋[1] 孙文军[1] 周海娇[1] 

机构地区：[1]哈尔滨师范大学光电带隙材料教育部重点实验室 黑龙江省先进功能材料与激发态重点实验室

出　　处：《哈尔滨师范大学自然科学学报》2014年第1期26-29,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省自然基金(F201202);黑龙江省教育厅骨干教师项目(1251G031);哈尔滨师范大学预研项目(08XYS-01)

摘　　要：构建了高斯脉冲激光辐照半导体材料的二维轴对称模型及热源模型,通过求解热传导方程计算了材料表面沿径向和纵向及材料表面中心的温度场分布.采用多物理场直接耦合分析软件COMSOL Multiphysics分析了1064 nm纳秒级脉冲激光辐照半导体材料TiO2的温度场分布.分析单光子吸收与自由载流子吸收对材料温升的影响.结果表明,对于波长为1064 nm的脉冲激光辐照TiO2,当激光的峰值功率密度达到108W/cm2时,自由载流子吸收的作用已不可忽视.计算温度场时,应同时考虑两种吸收.The two-dimensional Gaussian pulse laser irradiation axis of symmetry model of semiconductor materials and heat model are constructed,the surface temperature field distribution along the radial and longitudinal and surface centers are calculated by solving the equation of heat conduction. Used direct-coupled multi-physics analysis software COMSOL Multiphysics,1064nm nanosecond pulsed laser irradiation of semiconductor material temperature distribution of TiO2is analyzed. Single-photon absorption material effect on the temperature rise and the free-carrier absorption is analyzed,too. The results show that,for a wavelength of 1064nm pulsed laser irradiation TiO2,when the peak power density of the laser reaches 10^8W / cm^2,the free carrier absorption effect is not be ignored. When calculating the temperature field,two absorption should also be considered.

关 键 词：脉冲激光辐照 半导体材料 单光子吸收 自由载流子吸收 

分 类 号：TN215[电子电信—物理电子学]