高芯片偏振消光比铌酸锂多功能集成光学器件  

LiNbO3 Multi-function Integrated Optics Chip with high Polarization Extinction Ratio

作　　者：华勇[1] 舒平[1] 朱学军[1] 田自君[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2014年第2期181-183,共3页Semiconductor Optoelectronics

摘　　要：分析了铌酸锂多功能集成光学器件的偏振消光机理,设计和制作了高芯片偏振消光比的铌酸锂多功能集成光学器件。器件采用切断部分输入直波导后在切断端面选择性镀阻光膜的结构以截断射入衬底的辐射光,与芯片耦合后实现了高于85dB的芯片偏振消光比。制作的器件插入损耗小于3.5dB,分光比为48/52~52/48,半波电压Vπ小于3.5V,尾纤偏振串音小于-33dB;在-55^+85℃全温范围内,损耗变化量小于0.2dB,分光比变化小于1%,尾纤偏振串音小于-27dB,能够满足工程化应用需要。The principles of Multi-function Integrated Optics Chips （MIOC） polarization extinction were analyzed, based on which, a new structure of MIOC with high polarization extinction ratio was designed and fabricated. For this new design, a part of input straight waveguide is cut off and its end face is polished, then a mask is coated on the end face except the area of the waveguide, and then it is bonded with another part of the chip, so that the radiation can be blocked in the substrate and a high polarization extinction ratio more than 85 dB is obtained. Such parameters as the insertion loss of less than 3.5 dB, splitting ratio of 48/52-52/ 48, half-wave voltage of less than 3.5 V, and the polarization crosstalk of tail fiber of less than -33 dB are obtained. In the temperature range of -55-t-85 ℃, the loss variation of less than 0.2 dB, splitting ratio variation of less than 1% and the polarization crosstalk of tail fiber of less than -27 dB are obtained. So practical engineering applications can be satisfied.

关 键 词：集成光学 芯片偏振消光比 光波导 光纤陀螺 铌酸锂 

分 类 号：TN25[电子电信—物理电子学]