半导体列阵激光器波长复合设计及实验研究  

Study on the Wavelength Multiplexing of Diode Laser Arrays

作　　者：徐小红[1,2] 刘媛媛[3] 刘迪[3,2] 孙海东 王梅[3,2] 王晓薇[3,2] 马骁宇[3] 

机构地区：[1]中国矿业大学,北京100083 [2]海特光电有限责任公司,北京102200 [3]中国科学院半导体研究所,北京100083

出　　处：《半导体光电》2014年第2期237-240,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61275145)

摘　　要：利用半导体材料波长易调节的特点,设计了AlGaInAs/GaAs/AlGaAs压应变量子阱结构,得到760、800、860、930和976nm 5个波长激射的半导体列阵激光器,同时设计了4个短波通滤波片参数,开展了半导体列阵激光器的多波长光束复合技术的实验研究,最终实现了5个波长的半导体列阵激光器的光束复合,得到112W的激光功率输出,总体效率为88.5%,其中波长复合效率达92.4%,输出聚焦光斑尺寸为136μm×1 330μm,聚焦光功率密度达6.43×104 W/cm2。Making use of the characteristic of adjustable wavelength of semiconductor materials, A1GaInAs / GaAs / A1GaAs compressive strain quantum well structure was designed and the diode arrays with different wavelength of 760, 800, 860, 930 and 976 nm were fabricated. And also four kinds of edge-band filters and one set of collimating system were designed. Then the five different beams were multiplexed and the laser power of 112 W with the total efficiency of 88.54% is obtained. And the focused spot and the foc^as optical power density are measured to be 136 μm× 1 330 μm and 6.43× 104 W/cm2, respectively.

关 键 词：压应变 列阵激光器 波长复合 短波通滤波片 

分 类 号：TN248[电子电信—物理电子学]