Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique  

作　　者：廖雪阳 张凯 曾畅 郑雪峰 恩云飞 来萍 郝跃 

机构地区：[1]Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,the 5th Electronics Research Institute of the Ministry of Industry and Information Technology [2]Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Chinese Physics B》2014年第5期505-509,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)

摘　　要：Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed gate structure （RGS） and the normal gate structure （NGS）, are studied in the experiment. Interface trap parameters includ-ing trap density Dit, trap time constant ιit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching （RIE）.Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/A1GaN/GaN metal-oxide-semiconductor （MOS） structures. Two types of device structures, namely, the recessed gate structure （RGS） and the normal gate structure （NGS）, are studied in the experiment. Interface trap parameters includ-ing trap density Dit, trap time constant ιit, and trap state energy ET in both devices have been determined. Furthermore, the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching （RIE）.

关 键 词：Al2O3/AlGaN/GaN interface trap states CONDUCTANCE CAPACITANCE 

分 类 号：O482[理学—固体物理]