Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET  

作　　者：雷晓艺 刘红侠 张月 马晓华 郝跃 

机构地区：[1]Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education,State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies,School of Microelectronics,Xidian University [2]School of Technical Physics,Xidian University

出　　处：《Chinese Physics B》2014年第5期525-529,共5页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant No.61106106)

摘　　要：The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET （pMOFET） that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.The degradation produced by hot carrier （HC） in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor （nMOSFET） has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET （pMOFET） that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.

关 键 词：n-channel metal oxide semiconductor field effect transistor hot carder DEGRADATION lifetimemodel 

分 类 号：TN386[电子电信—物理电子学]