磁控溅射制备Mn-Co-Ni-O热敏红外探测薄膜  

Preparation of Mn-Co-Ni-O films by RF magnetron sputtering for IR thermal detectors

作　　者：欧阳程[1] 吴敬[1] 周炜[1] 高艳卿[1] 侯云[1] 黄志明[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与激光工程》2014年第4期1068-1072,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(11204336;61275111);上海市自然科学基金(12ZR1452200);中国科学院上海技术物理研究所创新专项(Q-ZY-96;Q-ZY-89)

摘　　要：尖晶石Mn-Co-Ni-O三元氧化物具有优良的负温度系数（NTC），是一种制作热敏红外探测器较为理想的材料。采用射频磁控溅射法在非晶Al2O3衬底上制备了Mn1.56Co0.96Ni0.48O4（MCNO）多晶薄膜。使用能量色散X射线谱（EDS）对薄膜中金属元素组分进行了测量，分析得出薄膜中金属元素组分与靶材中的组分偏离在5%以内。对经过750℃空气中退火后的薄膜结构、电学和光学性质也进行了研究。实验结果表明：退火后薄膜具有单一立方尖晶石结构，且薄膜表面致密、均匀性好；薄膜的传导机制遵循小极子跃迁传导，在240~330 K范围内符合VRH模型，其激活能和电阻温度系数（TCR）在室温下（300 K）分别为0.297 eV和-3.83%K-1；薄膜在紫外-可见波段具有较高的吸收率，间接带宽为0.61 eV。Mn-Co-Ni-O spinel, owing to its low resistivity and large temperature dependent resistivity, is an attractive ternary system for thermistor applications and infrared detecting bolometers. Mn1.56Co0.96Ni0.48O4 （MCNO） polycrystalline films for infrared detection were successfully deposited on amorphous Al2O3 substrates by radio-frequency （RF） magnetron sputtering. Energy dispersive spectroscopy （EDS） indicates, for all the MCNO films, that the deviations of metallic element composition rank less than 5% comparing to the target . Structural , electrical , optical properties of MCNO films annealed at 750 ℃ were also investigated. X-ray diffraction shows the 750℃ annealed sample has a single cubic spinel phase, and the film is of favorable crystallization and compact density. The conduction mechanism of MCNO thin film follows the small-polaron hopping model, and the hopping type is variable-range-hopping （VRH） at 240-330 K. The TCR and the activation energy of MCNO films at room temperature （300 K） is 0.297 eV and -3.83%K-1, respectively. Also, the absorption coefficient αhas a relatively high value in the region of ultraviolet-visible and the indirect band gap is about 0.61 eV.

关 键 词：射频磁控溅射 MN1 56Co0 96Ni0 48O4薄膜 红外探测 

分 类 号：TN215[电子电信—物理电子学]