氩离子溅射刻蚀对Ti-Si-C纳米复合薄膜XPS分析的影响  

Influence of Ar Ion Sputter-Etching on XPS Analysis of Ti-Si-C Nanocomposite Film

作　　者：姜金龙[1,2] 陈娣[1] 王琼[1] 杨华[1] 魏智强[1] 

机构地区：[1]兰州理工大学,甘肃兰州730050 [2]中国科学研究院兰州化学物理研究所固体润滑国家重点实验室,甘肃兰州730000

出　　处：《稀有金属材料与工程》2014年第4期977-981,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金资助(5110586)

摘　　要：通过中频非平衡磁控溅射Ti80Si20复合靶在氩气和甲烷混合气氛中沉积Ti-Si-C复合薄膜。采用X射线衍射仪、Raman光谱和X射线光电子能谱分析薄膜微结构。结果显示:制备的薄膜为非晶碳(a-C:Si:H)包裹约10 nm TiC晶粒的复合结构,氩离子溅射刻蚀对XPS分析结果有显著影响。随氩离子刻蚀溅射刻蚀时间增加,薄膜表面C、O原子含量明显降低,而Ti、Si原子含量增加。氩离子溅射刻蚀导致薄膜非晶碳相发生石墨化转变,即sp3C-C(H)/sp2C-C比率减小,同时,C-Ti*/C-Ti和C-(Ti+Ti*)/C-C强度比明显增加。The Ti-Si-C nanocomposite film was deposited in gas mixtures of Ar and CH4 by middle frequency unbalanced magnetron sputtering Ti80Si20 composite targets. The microstructure of the film was investigated by X-ray diffraction, Raman spectrum and X-ray photoelectron spectroscopy. The results show that the film exhibits nc-TiC/a-C：Si：H nanocomposite structure with about 10 nm nanocrystallites TiC embedded in hydrocarbon （a-C：Si：H） matrix. The results of XPS analysis strongly depend on Ar~ sputter-etching. The C and O content on the film surface distinctly decreases, while the Ti and Si content gradually increase with the increasing of Ar＋ sputter-etching time. It is found that Ar＋ sputter-etching results in the graphitization of the amorphous carbon phase in the nanocomposite film. In other words, the sp3C-C（H）/sp2C-C ratio decreases with the increasing of Ar＋ sputter-etching time. In addition, the C-Ti＊/C-Ti and C-（Ti＋Ti＊）/C-C ratios obviously increase.

关 键 词：Ti-Si-C纳米复合薄膜 氩离子溅射刻蚀 X射线光电子能谱 键合结构 

分 类 号：O484[理学—固体物理]