高深宽比硅通孔的SAPS兆声波清洗技术  

SAPS Megasonic Cleaning Technology for High Aspect Ration TSV

作　　者：薛恺 陈福平 张晓燕 张明川 王晖[2] 于大全[1,3] 

机构地区：[1]华进半导体封装先导技术研发中心有限公司,江苏无锡214000 [2]盛美半导体设备有限公司,上海201210 [3]中国科学院微电子研究所,北京100029

出　　处：《半导体技术》2014年第5期377-382,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2011ZX02709-2)

摘　　要：硅通孔(TSV)是三维系统集成的关键技术和发展趋势,目前已经可以实现深宽比为10∶1的TSV结构,且向着更高深宽比方向发展。在TSV制造工艺中,硅通孔刻蚀后的清洗是目前的关键技术难点之一。针对TSV刻蚀的工艺特点和TSV结构的特点,基于气体交替技术的硅刻蚀反应副产物种类以及清洗过程清洗液在TSV孔内的流体特性进行分析,探讨了一种基于现有清洗液,利用空间交变相位移(SAPS)兆声波技术进行TSV刻蚀后的清洗方法,并阐述了该清洗工艺的特点及前后工艺间的相互影响。研究结果表明,SAPS兆声波清洗能高效去除深孔内刻蚀残余产物,在TSV工艺集成中有较好的应用前景。Through silicon via （TSV） is regarded as the key technology and the developing trend of 3D system integration. The aspect ratio of the TSV has achieved about 10 ： 1 at present and is still in- creasing. In the TSV fabrication process, post-cleaning after via etching is one of the key technological challenges. Aimed at the characteristics of TSV etching process and TSV structure, the by-product spe- cies of gas alternating TSV etching process and fluidic characteristic of cleaning chemicals in TSV are analyzed. A space alternated phase shift （SAPS） megasonic cleaning technique based on common clea- ning chemicals was discussed. The proposed cleaning characteristic and its impact on related processes were described. The results show that SAPS via. This cleaning technique is promising in megasonic cleaning is effective on residue removal inside the future TSV process integration.

关 键 词：硅通孔(TSV) SAPS兆声波清洗 3D IC 盲孔清洗 清洗技术 

分 类 号：TN305.97[电子电信—物理电子学]