应力作用下石墨烯在磁场中的隧穿特性  

Tunneling Properties of Strained Graphene Driven by the Magnetic Fields

作　　者：马丽娜[1] 张森[2] 李荣华[2] 阎维贤[2] 

机构地区：[1]山西大学理论物理研究所,山西太原030006 [2]山西大学物理电子工程学院,山西太原030006

出　　处：《山西大学学报（自然科学版）》2014年第2期227-231,共5页Journal of Shanxi University(Natural Science Edition)

基　　金：国家基础科学人才培养基金(J1103210)

摘　　要：研究了在垂直作用磁场驱动下的应变石墨烯单层的隧穿性质,通过转移矩阵给出了穿过一个磁势垒的透射率。研究发现在小角度散射中,与处于电势垒中的克莱因隧穿不同,磁场可以把电子束缚在一个应变的磁势垒中。只要入射能量不是很大,应变的存在可以显著增加定向透射率,这在技术应用中很重要,而大的入射能量能完全把应变的效应去除,使得应变的石墨烯和理想石墨烯几乎具有相同的隧穿性质。The tunneling properties of the strained graphene monolayer pierced by the perpendicular magnetic fields has been investigated, The transmission through a magnetic barrier has been given in the framework of the transfer matrix technique. It is found that the magnetic field can confine the electron into the magnetic barrier in the small-angle incidence in contrast to the usual Klein tunneling in the electric potential barrier. The strain can increase the transmission in a striking way provided that the incident energies are not large. The large incident energies not only spoil the magnetic confinement but smear out the difference between the perfect graphene and strained one.

关 键 词：应变石墨烯 狄拉克粒子 透射 磁势垒 

分 类 号：O414[理学—理论物理]