Effects of Low-Frequency Source on a Dual-Frequency Capacitive Sheath near a Concave Electrode  

作　　者：郝美兰 戴忠玲 王友年 

机构地区：[1]Department of Physics and Electronic Engineering,Handan College [2]School of Physics and Optoelectronic Technology,Dalian University of Technology

出　　处：《Plasma Science and Technology》2014年第4期320-323,共4页等离子体科学和技术（英文版）

基　　金：supported by Handan Science and Technology Research and Development Project of China(No.1121120069-5);the Scientific Research Start-up Funds of Doctor and Master of Handan College of China(No.2010005);National Natural Science Foundation of China(Nos.11335004 and 11375040);the Important National Science and Technology Specific Project of China(No.2011ZX02403-001)

摘　　要：A self-consistent two-dimensional （2D） collisionless fluid model is developed to sim- ulate the effects of the low-frequency （LF） power on a dual frequency （DF） capacitive sheath over an electrode with a cylindrical hole. In this paper, the time-averaged potential, electric field （E- field）, ion density in the sheath, and ion energy distributions （IEDs） at the center of the cylindrical hole＇s bottom are calculated and compared for different LF powers. The results show that the LF power is crucial for determining the sheath structure. As the LF power decreases, the potential drop decreases, the sheath becomes thinner, and the plasma molding effect seems to be more significant. The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.A self-consistent two-dimensional （2D） collisionless fluid model is developed to sim- ulate the effects of the low-frequency （LF） power on a dual frequency （DF） capacitive sheath over an electrode with a cylindrical hole. In this paper, the time-averaged potential, electric field （E- field）, ion density in the sheath, and ion energy distributions （IEDs） at the center of the cylindrical hole＇s bottom are calculated and compared for different LF powers. The results show that the LF power is crucial for determining the sheath structure. As the LF power decreases, the potential drop decreases, the sheath becomes thinner, and the plasma molding effect seems to be more significant. The existence of a radial E-field near the sidewalls of a hole may cause a significant portion of ions to strike the sidewall and lead to the phenomenon of notching.

关 键 词：capacitively coupled plasma SHEATH fluid two dimension LF power 

分 类 号：O539[理学—等离子体物理]