聚酰亚胺薄膜绕包铜扁线耐电晕性能的研究  

Corona-resistance Research of Flat Copper Wire Winded by Polyimide Film

作　　者：刘佳音[1] 唐文进[1] 周升[1] 杨名波[1] 陈琛[1] 

机构地区：[1]株洲时代新材料科技股份有限公司,湖南株洲412007

出　　处：《绝缘材料》2014年第1期63-65,共3页Insulating Materials

摘　　要：通过对聚酰亚胺薄膜绕包铜扁线的工艺研究,分析了聚酰亚胺薄膜绕包铜扁线的耐电晕性能。结果表明:影响聚酰亚胺薄膜绕包铜扁线耐电晕性能的主要因素为烧结温度、绕包张力和红外辐射炉温度。当烧结温度为230℃,绕包张力为8 N,红外辐射炉温度为450℃时,聚酰亚胺薄膜绕包铜扁线的耐电晕性能最佳。The corona-resistance of flat copper wire winded by polyimide film was analyzed by studying the technology of the flat copper wire. The results show that the main factors influencing the corona-resis-tance are sintering temperature, winding tension and infrared radiation oven temperature. When the sinter-ing temperature is 230℃, winding tension is 8 N, infrared radiation oven temperature is 450℃, the coro-na-resistance of the flat copper wire winded by polyimide film is optimum.

关 键 词：电磁线 烧结工艺 耐电晕性能 

分 类 号：TM245[一般工业技术—材料科学与工程] TM215.3[电气工程—电工理论与新技术]