Electron-leakage-related low-temperature light emission efficiency behavior in GaN-based blue light-emitting diodes  

作　　者：闫大为 李丽莎 任舰 王福学 杨国锋 肖少庆 顾晓峰 

机构地区：[1]Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University [2]Department of Science, Jiangnan University

出　　处：《Journal of Semiconductors》2014年第4期83-86,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.11074280);the Natural Science Foundation of Jiangsu Province,China(No.BK2012110);the Fundamental Research Funds for the Central Universities of China(No.JUSRP51323B);the Chinese Postdoctoral Science Foundation(No.2013M540437);the State Key Laboratory of ASIC and System(No.11KF003);the PAPD of Jiangsu Higher Education Institutions and the Summit of the Six Top Talents Program of Jiangsu Province(No.DZXX-053)

摘　　要：The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well （MQW） blue light- emitting diodes （LEDs） grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior.

关 键 词：gallium nitride light-emitting diode emission efficiency electron leakage 

分 类 号：TN312.8[电子电信—物理电子学] TH136[机械工程—机械制造及自动化]