The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters  

作　　者：吴雪 陆妩 李豫东 郭旗 王信 张兴尧 于新 马武英 

机构地区：[1]Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China [2]Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China [3]University of Chinese Academy of Sciences, Beij ing 100049, China

出　　处：《Journal of Semiconductors》2014年第4期87-91,共5页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.11005152)

摘　　要：This paper presents the total ionizing dose test results at different biases and dose rates for AD9233, which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.This paper presents the total ionizing dose test results at different biases and dose rates for AD9233, which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.

关 键 词：ionizing radiation analog-to-digital converter different biases dose-rate effects 

分 类 号：TN792[电子电信—电路与系统]