A dynamic-biased dual-loop-feedback CMOS LDO regulator with fast transient response  

作　　者：王菡 孙毛毛 

机构地区：[1]Analog IC Design Department, Chongqing Acoustoelectric and Optoelectronic Co., Ltd.

出　　处：《Journal of Semiconductors》2014年第4期114-122,共9页半导体学报（英文版）

摘　　要：This paper presents a low-dropout regulator （LDO） for portable applications with dual-loop feedback and a dynamic bias circuit. The dual-loop feedback structure is adopted to reduce the output voltage spike and the response time of the LDO. The dynamic bias circuit enhances the slew rate at the gate of the power transistor. In addition, an adaptive miller compensation technique is employed, from which a single pole system is realized and over a 59~ phase margin is achieved under the full range of the load current. The proposed LDO has been implemented in a 0.6μm CMOS process. From the experimental results, the regulator can operate with a minimum dropout voltage of 200 mV at a maximum 300 mA load and IQ of 113μA. The line regulation and load regulation are improved to 0. l mV/V and 3.4 μV/mA due to the sufficient loop gain provided by the dual feedback loops. Under a full range load current step, the voltage spikes and the recovery time of the proposed LDO is reduced to 97 mV and 0.142 μs respectively.This paper presents a low-dropout regulator （LDO） for portable applications with dual-loop feedback and a dynamic bias circuit. The dual-loop feedback structure is adopted to reduce the output voltage spike and the response time of the LDO. The dynamic bias circuit enhances the slew rate at the gate of the power transistor. In addition, an adaptive miller compensation technique is employed, from which a single pole system is realized and over a 59~ phase margin is achieved under the full range of the load current. The proposed LDO has been implemented in a 0.6μm CMOS process. From the experimental results, the regulator can operate with a minimum dropout voltage of 200 mV at a maximum 300 mA load and IQ of 113μA. The line regulation and load regulation are improved to 0. l mV/V and 3.4 μV/mA due to the sufficient loop gain provided by the dual feedback loops. Under a full range load current step, the voltage spikes and the recovery time of the proposed LDO is reduced to 97 mV and 0.142 μs respectively.

关 键 词：dual-loop feedback dynamic bias adaptive miller compensation low-dropout regulator （LDO） tran-sient response 

分 类 号：TM44[电气工程—电器]