Thermal conductivity of PECVD silicon-rich silicon nitride films measured with a SiO_2/Si_xN_y bimaterial microbridge test structure  

作　　者：韩建强 李琰 李森林 李青 

机构地区：[1]College of Mechanical & Electrical Engineering, China Jiliang University

出　　处：《Journal of Semiconductors》2014年第4期165-168,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61076110);the Zhejiang Key Discipline of Instrument Science and Technology(No.JL130101)

摘　　要：In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor deposition process. Accurately measuring the thermal conductivity of the film is highly desirable in order to design, simulate and optimize MEMS devices. In this paper, a Si02/SixNy bimaterial microbridge structure is presented to measure the thermal conductivity of the silicon-rich silicon nitride film by single steady-state measurement. The thermal conductivity is extracted as 3.25 W/（m-K）. Low thermal conductivity indicates that the silicon-rich silicon nitride film can still be utilized as thermally insulating material in thermal sensors although its thermal conductivity is slightly larger than the values reported in literature.In order to balance the compressive stress of a silicon dioxide film and compose a steady MEMS structure, a silicon-rich silicon nitride film with tensile stress is deposited by plasma enhanced chemical vapor deposition process. Accurately measuring the thermal conductivity of the film is highly desirable in order to design, simulate and optimize MEMS devices. In this paper, a Si02/SixNy bimaterial microbridge structure is presented to measure the thermal conductivity of the silicon-rich silicon nitride film by single steady-state measurement. The thermal conductivity is extracted as 3.25 W/（m-K）. Low thermal conductivity indicates that the silicon-rich silicon nitride film can still be utilized as thermally insulating material in thermal sensors although its thermal conductivity is slightly larger than the values reported in literature.

关 键 词：MEMS silicon nitride film thermal conductivity bimaterial microbridge 

分 类 号：TN304[电子电信—物理电子学]