Effect of Tb Doping on Structural and Electrical Properties of BiFeO_3 Thin Films Prepared by Sol-Gel Technique  

作　　者：Guohua Dong Guoqiang Tan Wenlong Liu Ao Xia Huijun Ren 

机构地区：[1]Key Laboratory of Auxiliary Chemistry & Technology for Chemical Industry,Ministry of Education,Shaanxi University of Science & Technology

出　　处：《Journal of Materials Science & Technology》2014年第4期365-370,共6页材料科学技术（英文版）

基　　金：supported by the Project of the National Natural Science Foundation of China(Grant No.51172135);the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002092);Research and Special Projects of the Education Department of Shaanxi Province(Grant No.12JK0445);the Graduate Innovation Fund of Shaanxi University of Science and Technology(SUST-A04)

摘　　要：Bil_xTbxFe03 thin films were prepared on Sn02 （fluorine doped tin oxide） substrates by a sol-gel method. The structural and electrical properties of the BiFe03 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFe03 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bio.sgTbo.11Fe03 thin film showed the well-developed P-E loops, which enhanced remnant polarization （Pr = 88.05 μC/cm2） at room temperature. The dielectric constant and dielectric loss of Bio.sgTbo.llFe03 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bio.seTbo.llFe03 thin film showed a relatively low leakage current density of 2.07×10-5 A/cm2 at an applied electric field of 150 kV/cm. The X- ray photoelectron spectroscopy （XPS） spectra indicated that the presence of Fe2＋ ions in the Bio.egTbo.11Fe03 thin film was less than that in the pure BiFe03.Bil_xTbxFe03 thin films were prepared on Sn02 （fluorine doped tin oxide） substrates by a sol-gel method. The structural and electrical properties of the BiFe03 thin films were characterized and tested. The results indicated that the diffraction peak of the Tb-doped BiFe03 films was shifted towards right as the doping amounts were increased. The structure was transformed from the rhombohedral to tetragonal/orthorhombic phase. The Bio.sgTbo.11Fe03 thin film showed the well-developed P-E loops, which enhanced remnant polarization （Pr = 88.05 μC/cm2） at room temperature. The dielectric constant and dielectric loss of Bio.sgTbo.llFe03 thin film at 100 kHz were 185 and 0.018, respectively. Furthermore, the Bio.seTbo.llFe03 thin film showed a relatively low leakage current density of 2.07×10-5 A/cm2 at an applied electric field of 150 kV/cm. The X- ray photoelectron spectroscopy （XPS） spectra indicated that the presence of Fe2＋ ions in the Bio.egTbo.11Fe03 thin film was less than that in the pure BiFe03.

关 键 词：BiFeO3 thin films Tb doping Sol-gel method Ferroelectric properties 

分 类 号：TB383.2[一般工业技术—材料科学与工程]