简化4T像素结构CMOS图像传感器设计与实现  

Design and Implementation of Simplified 4T Pixel Structure CMOS Image Sensor

作　　者：赵秋卫 李晓宇[1] 

机构地区：[1]长春理工大学计算机科学技术学院,长春130022

出　　处：《固体电子学研究与进展》2014年第2期179-183,共5页Research & Progress of SSE

摘　　要：阐述了一种简化4T像素结构的设计。较普通4T像素结构而言,该简化结构像素内部去掉了行选通管,从而提高了像素的填充因子,简化了内部电路设计,减小了版图的面积,消除了行选通管引入的随机噪声。该像素结构采用0.11μm CIS工艺,成功应用于一款像素阵列为640×480的CMOS图像传感器芯片,经过流片测试,芯片整体性能达到了预期的设计目标。A simplified 4T pixel structure is presented in this paper. Compared with ordinary 4T pixel structure, the simplified structure removes the row select gate within it, thereby increasing the pixel fill factor, simplifying the design of the internal circuit, and reducing the area of the layout, as well as eliminating the random noise caused by the row select gate. The pixel structure, using the 0.11μm CIS process, has been successfully applied to a 640×480 pixel array CMOS image sensor. Test result shows that the overall performance of the chip has reached the expected design goal.

关 键 词：互补金属氧化物半导体图像传感器 简化4T像素结构 填充因子 灵敏度 

分 类 号：TN43[电子电信—微电子学与固体电子学] TP212[自动化与计算机技术—检测技术与自动化装置]