Mn掺杂对铁酸铋薄膜漏电流和铁电性能的影响  

Effect of Mn Doping on Leakage Current and Ferroelectric Properties of BiFeO_3 Thin Films

作　　者：罗劲明[1] 

机构地区：[1]嘉应学院物理与光信息科技学院,广东梅州514015

出　　处：《嘉应学院学报》2014年第2期26-29,共4页Journal of Jiaying University

基　　金：梅州市科学技术局与嘉应学院联合自然科学研究项目(2013KJM02)

摘　　要：采用溶胶凝胶的化学溶液沉积法在Pt/Ti/SiO2/Si衬底上制备了不同浓度(0,0.05,0.1 at.%)的Mn掺杂铁酸铋薄膜.薄膜晶体结构的X射线衍射结果显示不同浓度掺杂的薄膜平均晶粒尺寸相差并不大,而薄膜的漏电流分析则表明5%Mn掺杂的铁酸铋薄膜比未掺杂和10%Mn掺杂的薄膜漏电流要小.此外,通过薄膜的铁电性能测试发现5%Mn掺杂的铁酸铋薄膜比未掺杂和10%Mn掺杂的薄膜的铁电性能也要好.根据缺陷化学理论,由氧空位的电荷补偿引起的Fe离子和Mn离子价态变化是产生这一结果的主要原因.Mn -doped BiFeO3 thin films are fabricated by chemical solution deposition on Pt/Ti/SiO2/Si substrates with different doping concentrations （0, 0. 05, 0. 1 at. % ）. The X - ray diffraction results demonstrate that there is little change in average grain size with Mn substitution in BiFeO3 thin films, and the leakage current analysis re- veals that the leakage current in 5% Mn - substituted BiFeO3 thin films is much lower than that in pure and 10% Mn -substituted BiFeO3 thin films. Moreover, the ferroeleetric properties in 5% Mn - substituted BiFeO3 thin films have also been improved compared with pure and 10% Mn - substituted BiFeO3 thin films. According to de- feet chemistry theory, the valence variation of Fe ions and Mn ions for charge compensation of oxygen vacancies is supposed to be responsible for these observed behaviors.

关 键 词：MN掺杂 铁酸铋 漏电流 铁电性能 

分 类 号：O482[理学—固体物理]