Sb掺杂ZnSnO_3透明导电薄膜:制备与性能(英文)  

Sb Doped ZnSnO_3 Transparent and Conducting Thin Films: Preparation and Property

作　　者：储晓菲[1] 贺蕴秋[1] 李一鸣[1] 黄河洲[1] 刘德宇[1] 陈慧敏[1] 李文有[1] 

机构地区：[1]同济大学材料科学与工程学院,上海201800

出　　处：《无机化学学报》2014年第5期1212-1220,共9页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金(No.51175162)资助项目

摘　　要：采用溶胶-凝胶法(Sol-Gel)和旋涂法制备了未掺杂的ZnSnO3薄膜和掺入不同物质的量的Sb的ZnSnO3薄膜。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、X射线光电子能谱(XPS)、霍尔效应仪(Hall)以及紫外-可见光(UV-Vis)等表征了热处理后薄膜的晶相、微观形貌、晶格缺陷、电学性能以及紫外-可见光透过率。结果表明:所有薄膜都是ZnSnO3结构;与未掺Sb的ZnSnO3薄膜相比,掺入Sb后的ZnSnO3薄膜的电阻率都有不同程度的降低,其中掺入8mol%Sb的薄膜具有最低的电阻率0.96Ω·cm;缺陷研究表明:Sb的掺入使得晶格中的间隙锌离子含量增加,这有利于薄膜电阻率的降低;薄膜的紫外-可见光(UV-Vis)表明:在波长大于475 nm的可见光范围内,掺入Sb的ZnSnO3薄膜的可见光透过率都在80%以上。Undoped and Sb doped ZnSnO3 thin films were synthesized by a sol-gel spin-coating method. A comparative study between these films was presented. The structure, electrical and optical properties of ZnSnO3 thin films doped with 0tool%, lmol%, 8mo1% and 30mo1% of Sb were investigated by X-ray diffraction （XRD）, field emission-scanning electron microscope （FE-SEM）, X-ray photoelectron spectroscope （XPS）, Hall measurement and ultraviolet-visible spectroscope （UV-Vis）. The results show that all films correspond to a pure phase of ZnSnO3 structure and that Sb doped ZnSnO3 films have lower resistivity than those of undoped ZnSnO3 films. The minimum resistivity is obtained in ZnSnO3 films doped with 8.0mo1% of Sb. In addition, interstitial zinc ions introduced by antimony ion doping in ZnSnO3 crystal lattice lead to a better conductivity. Furthermore, all doped ZnSnO3 films are with 〉80% transmittance in the region above 475 nm.

关 键 词：导电 透明 薄膜 溶胶一凝胶法 

分 类 号：O61[理学—无机化学]