Resistive switching characteristics of Dy_2O_3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition  

作　　者：Hong-Bin Zhao Hai-Ling Tu Feng Wei Xin-Qiang Zhang Yu-Hua Xiong Jun Du 

机构地区：[1]Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals

出　　处：《Rare Metals》2014年第1期75-79,共5页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China(Nos.50932001,51102020,and 51202013);the Important National Science&Technology Specific Projects(No.2009ZX02039-005)

摘　　要：Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.Resistive switching （RS） behaviors of Dy2O3- based memory devices with and without Pt nanocrystals （Pt-nc） layer were investigated for nonvolatile memory applications. The Cu/Pt-nc/Dy2O3/Pt memory exhibits excellent unipolar RS characteristics, including highly uniform switching parameters, lower switching voltage （〈1.2 V）, high resistance ratio （〉1 × 104）, a large number of switching cycles, as well as long retention time （〉1 × 105 s）, owing to the local electric field confined and strengthened near the nanocrystals＇ location.

关 键 词：Dy2O3 Unipolar resistive switching Pt nanocrystal layer Pulsed laser deposition 

分 类 号：O484.4[理学—固体物理]