C波段低相噪频率源的设计  

Design of C-band Frequency Source with Low Phase Noise

作　　者：朱普庆[1] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《舰船电子工程》2014年第4期71-75,共5页Ship Electronic Engineering

摘　　要：介绍基于DRO(Dielectric Resonator Oscillator)技术的低相噪微波频率源,由于DRO的高Q值其相比于锁相环(PLL)技术具有更低的相位噪声,用低温度系数的介质谐振器,有效地改善了振荡器的频率温度稳定性。同时减小介质谐振器与微带线之间的耦合度,能进一步改善相位噪声。论文设计的输出频率为4GHz的DRO在频偏10KHz处相位噪声-122dBc/Hz,输出功率8.5dBm,二次谐波抑制-42dBc,证明了其在低相位噪声频率源应用上的优势。Theory and technique of DRO（Dielectric resonator oscillator） in designing microwave frequency source with low phase noise are introduced in this paper. It has much lower phase noise compared with phase-locked loop（PLL） since DRO has high Q value, and effectively improves the temperature stability of the oscillator frequency in using dielectric re- sonator with low temperature coefficient, and reduces the coupling coefficient between the microstrip line and dielectric re- sonator to further improv phase noise. A 4GHz DRO is designed. Simulation results reveal that the phase noise is --122dBc/ Hz at 10KHz offset frequency, output power is 8. 5dBm, second harmonic suppression is --42dBc. The outcome verifies the DRO＇s advantage in frequency source with low phase noise application.

关 键 词：频率源 介质振荡器 相位噪声 耦合度 

分 类 号：TN74[电子电信—电路与系统]