Preparation of multi-wavelength infrared laser diode  

作　　者：薛明晰 陈志斌 王伟明 刘先红 宋岩 张超 侯章亚 

机构地区：[1]Shijiazhuang New Technology Application Institute,Mechanical Engineering College

出　　处：《Optoelectronics Letters》2014年第3期194-197,共4页光电子快报（英文版）

基　　金：supported by the Strategic Talented Project Specialized Foundation of the General Armament Ministry(No.ZZ[2013]714)

摘　　要：We prepare a new type of multi-wavelength infrared laser diode with four chips,three wavelengths(865 nm,905 nm and 1064 nm) and two working modes(pulse and single).The preparation technology of the diode includes two key processes:heat-sink and packaging processing technique to package four different chips on a same heat-sink.The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.We prepare a new type of multi-wavelength infrared laser diode with four chips, three wavelengths （865 nm, 905 nm and 1064 nm） and two working modes （pulse and single）. The preparation technology of the diode includes two key processes： heat-sink and packaging processing technique to package four different chips on a same heat-sink. The experimental results show that four output peak-wavelengths of the prototype diode all possess favorable stability.

关 键 词：激光二极管 多波长 制备 红外 加工技术 峰值波长 散热器 纳米 

分 类 号：TN31[电子电信—物理电子学]