Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power  

作　　者：李天微 张建军 曹宇 黄振华 马俊 倪牮 赵颖 

机构地区：[1]Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin,Key Laboratory of Photo-electronic,Information Science and Technology,Ministry of Education of China,Institute of Photo-electronic Thin Film Devices and Technique,Nankai University

出　　处：《Optoelectronics Letters》2014年第3期202-205,共4页光电子快报（英文版）

基　　金：supported by the National Basic Research Program of China(Nos.2011CBA00705,2011CBA00706 and 2011CBA00707);the National Natural Science Foundation of China(No.61377031);the Natural Science Foundation of Tianjin(No.12JCQNJC01000);the Fundamental Research Funds for the Central Universities

摘　　要：Hydrogenated microcrystalline silicon-germanium(μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition(RF-PECVD).The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously.Additionally,the microstructural properties of the μc-SiGe:H films are also studied.By combining Raman,Fourier transform infrared(FTIR) and X-ray fluoroscopy(XRF) measurements,it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.

关 键 词：GERMANIUM Light absorption Plasma enhanced chemical vapor deposition 

分 类 号：TN304.05[电子电信—物理电子学]