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机构地区:[1]Department of Physics,Ocean University of China [2]Qingdao Institute of Bioenergy & Bioprocess Technology,Chinese Academy of Sciences
出 处:《Optoelectronics Letters》2014年第3期216-220,共5页光电子快报(英文版)
基 金:supported by the National Natural Science Foundation of China(Nos.41172110 and 61107090);Shandong Provincial Natural Science Foundation(No.ZR2011BZ007)
摘 要:The refractive indices of thin films based on Kramers-Kronig theory are corrected.And the correction theory is used to determine the optical indices of nano-ZnO thin films prepared by low temperature sol-gel method.The calculated results indicate that in the visible(Vis) range,the refractive indices of nano-ZnO thin films exhibit a slight abnormal dispersion,while in the ultraviolet(UV) region,the refractive indices increase with wavelengths increasing(normal dispersion).But the refractive indices show complex change near the absorption edge.The maximum refractive index(1.95) of nano-ZnO thin films within UV range at low temperature annealing is much lower than that of the films annealed at high temperature.The absorption and refractive indices are closely related to the defects in nano-ZnO thin films.The refractive indices of thin films based on Kramers-Kronig theory are corrected. And the correction theory is used to determine the optical indices of nano-ZnO thin films prepared by low temperature sol-gel method. The calculated results indicate that in the visible (Vis) range, the refractive indices of nano-ZnO thin films exhibit a slight abnormal dispersion, while in the ultraviolet (UV) region, the refractive indices increase with wavelengths increasing (normal dispersion). But the refractive indices show complex change near the absorption edge. The maximum refractive index (1.95) of nano-ZnO thin films within UV range at low temperature annealing is much lower than that of the films annealed at high temperature. The absorption and refractive indices are closely related to the defects in nano-ZnO thin films.
关 键 词:纳米ZNO薄膜 低温退火 计算结果 膜制剂 光学 正常色散 折射率 吸收边
分 类 号:TN304.21[电子电信—物理电子学] TG156.2[金属学及工艺—热处理]
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