PI/Mg(OH)_2纳米复合薄膜的介电性能  

Dielectric Properties of PI / Mg( OH)_2 Hybrid Film

作　　者：范勇[1] 陈东[1] 王欢[1] 王黑龙 

机构地区：[1]哈尔滨理工大学材料研究与应用黑龙江省高校重点实验室,黑龙江哈尔滨150040

出　　处：《哈尔滨理工大学学报》2014年第2期111-114,共4页Journal of Harbin University of Science and Technology

基　　金：国家自然科学基金(50373008)

摘　　要：采用原位聚合法制备了聚酰亚胺(PI)/氢氧化镁(Mg(OH)2)纳米复合薄膜,设定Mg(OH)2掺杂量的质量分数分别为0%,1%,2%,4%和8%,研究纳米氢氧化镁不同掺杂量对聚酰亚胺薄膜电导电流、电老化阈值、介电系数的影响.结果表明:纳米氢氧化镁掺杂量质量分数为4%时,复合薄膜的电导电流出现最大值;随着Mg(OH)2掺杂量的增加,复合薄膜的电老化阈值和介电系数均逐渐增大.A polyimide/magnesium hydroxide nano-composite film was prepared by in-situ poly-merization method.A series of magnesium hydroxide nano-composite films with ratio of 0％ wt,2％ wt,4％ wt,6％ wt,8％ wt were applied to one research object.We studied the effects of doping amount on dielectric properties of PI/Mg （OH） 2 hybrid film.In this paper,the dielectric properties mainly include conduction current,electric degradation threshold and dielectric constant.The results showed that the maximum of conduction current appeared at around 4％ wt.With the doping content increasing,the electric degradation threshold and dielectric constant all increase gradually.

关 键 词：聚酰亚胺 纳米氢氧化镁 电导电流 电老化阈值 介电系数 

分 类 号：TM215.3[一般工业技术—材料科学与工程]