UFeGa_5单晶生长及晶体结构研究  

Single Crystal Growth and Crystal Structure of UFeGa_5

作　　者：谢东华[1,2] 赖新春[1] 陈秋云[1] 张延志[3] 徐钦英[1] 罗丽珠[1] 

机构地区：[1]表面物理与化学重点实验室,四川绵阳621907 [2]北京理工大学,北京100081 [3]中国工程物理研究院,四川绵阳621700

出　　处：《稀有金属材料与工程》2014年第3期646-649,共4页Rare Metal Materials and Engineering

摘　　要：采用镓自助熔剂的方法生长出了UFeGa5单晶,采用X射线衍射技术和Rietveld方法对UFeGa5晶体结构进行了研究。结果表明:生长出的UFeGa5单晶体结构完整,结晶性好。UFeGa5具有HoCoGa5型四方结构,空间群为P4/mmm(No.123),其晶格常数为a=0.42533(2)nm,c=0.67298(3)nm,并得到了透射电镜(TEM)实验验证。High-quality single crystals of UFeGa5 were grown by the Ga-flux method. The structure of UFeGa5 single crystal was studied by X-ray diffraction and Rietveld method. The results show that the structure of as-grown UFeGa5 single crystal is good and its crystallinity is well. The UFeGa5 has the HoCoGa5 type-structure with space group P4/mmm （No.123）. The lattice constants are a=0.42533（2） nm and c=0.67298（3） nm. The crystal structure results are confirmed by transmission electron microscopy.

关 键 词：UFeGa5 助熔剂法 晶体结构 Rietveld方法中图法 

分 类 号：O78[理学—晶体学] O614.62