脉冲开关用6英寸高di/dt晶闸管的研制  

Development of 6-inch High di/dt Thyristor for Pulse Switch

作　　者：王政英 姚震洋 操国宏 唐智慧[1] 唐革 

机构地区：[1]株洲南车时代电气股份有限公司,湖南株洲421001

出　　处：《大功率变流技术》2014年第2期23-26,共4页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：针对脉冲开关用晶闸管对di/dt耐量的高要求,阐述了晶闸管的导通过程和di/dt的失效机理。通过选用适当的硅单晶参数,调整P基区浓度分布,优化门极图形,采用双负角造型工艺,设计并试制出6英寸脉冲开关用晶闸管。该晶闸管的脉冲峰值电流可达300 kA,di/dt耐量超过3 000 A/μs,试验表明其具有良好的稳定性和可靠性。For the high requirements of the thyristor for pulse switch on di/dt tolerance, the turn-on process and di/dt failure mechanism of thyristor are described. The 6-inch thyristor for pulse switch has been developed by choosing appropriate parameters of silicon wafer, adjusting P-base impurity profile, optimizing gate graph, and using double negative angle bevel. The experiment verifies that the pulse peak current can reach 300 kA, the di/dt rating is more than 3 000 A/μs, and the thyristor has good stability and reliability.

关 键 词：6英寸晶闸管 脉冲开关 di DT P基区 门极图形 

分 类 号：TN34[电子电信—物理电子学]