BiFeO_3薄膜的制备及掺杂改性研究进展  

Progress in the preparation and doping modification of BiFeO_3 thin films

作　　者：王翠娟[1] 范素华[1,2] 张丰庆[1] 董蓬超[1] 郭晓东[1] 解肖斌 

机构地区：[1]山东建筑大学材料科学与工程学院,山东济南250101 [2]山东女子学院,山东济南250002

出　　处：《山东建筑大学学报》2014年第1期64-70,共7页Journal of Shandong Jianzhu University

基　　金：国家自然科学基金项目(50872075);国家自然科学基金项目(51272142)

摘　　要：BiFeO3薄膜是当前多铁材料研究的热点之一。作为一种无铅多铁材料,BiFeO3薄膜优异的铁电和磁学性能使它在信息存储器、传感器和自旋电子器件等众多功能材料领域都有广阔的应用前景。但目前还存在漏电流较大及老化等一系列问题,使其与未来器件应用的要求还有一定差距。目前改善BiFeO3薄膜多铁性能的方法主要是通过改进制备工艺及掺杂改性。文章综述了BiFeO3薄膜近年的研究进展,介绍了其晶体结构及性能、制备工艺、掺杂改性,并展望了BiFeO3薄膜未来可能的研究方向和发展趋势。BiFeO3 thin film is one of the hotspots in the research of muhiferroic materials. As a lead- free muhiferroic material, excellent ferroelectric and magnetic properties of BiFeO3 thin film enable its potential application in many areas of functional materials such as information storage, sensors and spintronie devices. However, there are still problems such as leakage current and aging that hinder its application in ferroelectric devices. At present, the main methods to improve the multiferroic properties of BiFeO3 thin film are the improvement of preparation process and doping modification. This paper summarizes the research advances in BiFeO3 thin films, introduces its crystal structure and properties, preparation method and doping modification, and looks forward to the possible research direction and development trend of BiFeO3 thin films.

关 键 词：BIFEO3薄膜 进展 制备 掺杂改性 

分 类 号：TM221[一般工业技术—材料科学与工程]