痕量Ga及退火工艺对高压阳极铝箔电化学性能的影响  

Effects of trace Ga and annealing process on electrochemical behavior of anode aluminum foil

作　　者：桂枫[1] 朱兵[1] 陈明安[1] 张新明[1] 林林 卢敬华 陈文 牟春 

机构地区：[1]中南大学材料科学与工程学院,长沙410083 [2]西南铝业(集团)有限责任公司,重庆401326

出　　处：《粉末冶金材料科学与工程》2014年第1期138-146,共9页Materials Science and Engineering of Powder Metallurgy

基　　金：国家重大基础研究规划(973计划)资助项目(2005CB623706)

摘　　要：通过开路电位-时间曲线、极化曲线和恒电位电流密度暂态曲线研究痕量 Ga 及退火工艺对高压阳极铝箔电化学性能的影响，在此基础上，结合光学显微镜和扫描电镜研究痕量 Ga 对阳极铝箔腐蚀发孔性能的影响。结果表明，退火工艺可以改变Al-44×10-6 Ga在含氯离子溶液中的电化学活性。提高退火温度（200～600℃）可促使Al-44×10-6 Ga的点蚀电位负移，500℃退火、保温1 h后，延长退火保温时间（4～12 h），点蚀电位变动很小；相对无Ga高纯铝，Ga含量为44×10-6的高纯铝在中性NaCl溶液中的开路电位向负电位方向移动约0.1～0.15 V、点蚀电位负移约0.11 V，并能在更负的电位下发生活性溶解；进而使相应的含Ga铝箔的腐蚀区面积比显著提高至96.5%，且蚀孔密度、分布均匀性提高，即痕量Ga改善了阳极铝箔在环保型盐酸-硫酸体系中的腐蚀发孔性能。The effect of trace Ga on the electrochemical behavior of high purity aluminum was characterized using open circuit potential-time curve, potentiodynamic polarization curve and potentiostatic current density transient curve. The effect of trace Ga on the pitting performance of anode aluminum foil was investigated by optical microscopy and scanning electron microscopy. The research indicates that, annealing process can change the electrochemical activity of Al-44×10-6 Ga in the solution containing chloride ion, increasing annealing temperature （200~600℃） can prompt the negative shift of pitting potential of Al-44×10-6 Ga, while the pitting potential changes a little with prolonging of the holding time（4～12 h）at 500℃. In naturally 3.5%NaCl solution, the open circuit potential of the high purity aluminum containing 44×10-6 Ga is 0.1～0.15 V lower than that of Ga-free high purity aluminum, and the pitting potential shifts negatively by about 0.11 V. The ratio of corrosion area of the Ga-contained foil is highly increases to 96.5%, and uniformity of pits also increases, indicating trace Ga can improve the pitting performance of anode aluminum foil in environmental friendly HCl-H2SO4 corrosion system.

关 键 词：阳极铝箔 GA 高纯铝 退火工艺 电化学性能 腐蚀发孔性能 

分 类 号：TG146.21[一般工业技术—材料科学与工程]