Electroforming-Free and Highly Uniform Al2O3 Resistive Random Access Memory by ALD-Based In Situ Hydrogen Plasma Treatment  

作　　者：邬华宇 张剑 张启龙 杨辉 骆季奎 

机构地区：[1]Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 [2]Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 [3]Institute of Material Research and Innovation, Bolton University, Deane Road Bolton BL3 5AB, United Kingdom

出　　处：《Chinese Physics Letters》2014年第5期148-151,共4页中国物理快报（英文版）

基　　金：Supported by the National High Technology Research and Development Program of China under Grant No 2013AA030701, and the National Natural Science Foundation of China under Grant Nos 61150110485 and 61274037.

摘　　要：Al2O3 resistive random access memory （RRAM） with electroforming-free characteristics, high stability and uni- form properties is fabricated. The effect of the in situ hydrogen plasma enhanced treatment on the device performance is investigated. The dominated conduction mechanisms of the devices are ohmic behavior at low fields and space charge limited charge injection at high fields. The great improvement in the device properties is attributed to the hydrogen plasma treatment with the Al2O3 film, and this simple while effective atomic layer deposition based plasma treatment process is expected to be useful for other RRAM material systems as well.Al2O3 resistive random access memory （RRAM） with electroforming-free characteristics, high stability and uni- form properties is fabricated. The effect of the in situ hydrogen plasma enhanced treatment on the device performance is investigated. The dominated conduction mechanisms of the devices are ohmic behavior at low fields and space charge limited charge injection at high fields. The great improvement in the device properties is attributed to the hydrogen plasma treatment with the Al2O3 film, and this simple while effective atomic layer deposition based plasma treatment process is expected to be useful for other RRAM material systems as well.

分 类 号：TQ051.8[化学工程] TP333.8[自动化与计算机技术—计算机系统结构]