Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction  

作　　者：张源涛 夏晓川 伍斌 史志锋 杨帆 杨小天 张宝林 杜国同 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, ailin University, Changchun 130012 [2]School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 [3]Sehool of electrical and electronic information, ailin Institute of Architecture and Civil Engineering, Changchun 130118

出　　处：《Chinese Physics Letters》2014年第5期179-182,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2011CB302005, the National Natural Science Foundation of China under Grant Nos 61106003 and 61223005, the Science and Technology Development Project in Jilin Province under Grant Nos 20080124 and 20130204032GX, and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory under Grant No ZHD201204.

摘　　要：p-ZnO：As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO：As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of -10^17 cm-3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO：As by further introducing the p-ZnO/MgO/n-GaN het- erostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO：As fabricated by using our methods.p-ZnO：As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO：As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of -10^17 cm-3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO：As by further introducing the p-ZnO/MgO/n-GaN het- erostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO：As fabricated by using our methods.

分 类 号：TN248[电子电信—物理电子学] TQ132.41[化学工程—无机化工]