Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability  

作　　者：王洪娟 韩根全 刘艳 颜静 张春福 张进成 郝跃 

机构地区：[1]Key Laboratory of Optoelectronic Technology and Systems of the Ministry of Education, College of Optoelectronie Engineering, Chongqing University, Chongqing 400044 [2]Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071

出　　处：《Chinese Physics Letters》2014年第5期191-194,共4页中国物理快报（英文版）

基　　金：Supported by the Fundamental Research Funds for the Central Universities under Grant Nos 106112013CDJZR120015 and 106112013CDJZR120017, and the National Natural Science Foundation of China under Grant No 61334002.

摘　　要：We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance （GM,lin） degradation and threshold voltage shift （△VTH） under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance （GM,lin） degradation and threshold voltage shift （△VTH） under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.

分 类 号：TN752[电子电信—电路与系统] TN304.12