基于CMOS工艺的双层非制冷热敏电阻型红外探测器  

A double-layer uncooled thermistor infrared detector based on standard CMOS technology

作　　者：申宁[1] 余隽[1] 黄正兴[1] 唐祯安[1] 

机构地区：[1]大连理工大学电子科学与技术学院,辽宁大连116023

出　　处：《光电子．激光》2014年第5期845-850,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61131004;61274076)资助项目

摘　　要：采用0.5μm标准CMOS工艺和微机械加工工艺,设计并制作了低成本双层非制冷热敏电阻型红外探测器。探测器采用隐藏桥腿式微桥结构,使用表面牺牲层技术实现,其中包括Al、W和Si3种牺牲层材料。CMOS工艺加工完成后,双层微桥结构的微机械加工过程只需进行湿法腐蚀即可,成本较低。对双层红外探测器的热性能和光电特性进行测试,其热导为1.96×10-5 W/K,热容为2.23×10-8 J/K,热时间常数为1.14ms。当红外辐射调制频率为10Hz时,双层红外探测器的电压响应率为2.54×104 V/W,探测率为1.6×108 cm·Hz1/2/W。This paper develops a low-cost double-layer uneooled thermistor infrared detector based on standard 0.5 μm CMOS technology and micromachining processes. The double-layer infrared detector employs a hidden-bridge-leg micro-bridge structure with a 55 μm× 55 μm bridge deck,two 7.5 btm width hidden bridge legs and an aluminum thermistor. The micro-bridge structure is implemented by the sur- face sacrificial layer technology without any additional lithography or thin film deposition procedure. The sacrificial layers include three materials, aluminum, tungsten and polysilicon. The double-layer infrared detector has a size of 65μm × 65μm and a fill factor of 71.6 %. The temperature coefficient of resistance （TCR） of the aluminum thermistor is about 0. 419%K in a muffle furnace whose temperature varies from 10 ℃ to 100 ℃ The thermal conductance of the double - layer infrared detector is calculated as 1.96 × 10-5 W/K by measuring responses to different heating currents from 0.3 mA to 4. 8 mA. The fabricated infrared detector is irradiated by an infrared laser which is modulated bya tnechanical chopper in a frequency range of 10-1000 Hz. Measurements show that the thermal time constant is 1.14 ms and the thermal mass is 2.23 × 10-8 J/K. The responsivity of the infrared detector is about 2.54 × 104 V/W at 10 Hz and the calculated detectivity is 1.6× 108 cmHz1/2/W.

关 键 词：CMOS红外探测器 非制冷红外探测器 低成本红外探测器 多牺牲层 双层红外探测器 

分 类 号：TN215[电子电信—物理电子学]