微纳米PIN电光调制器的优化  

Optimization of the micro-nano PIN electro-optic modulator

作　　者：冯松[1,2] 高勇[1,2] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048 [2]西安工程大学理学院,陕西西安710048

出　　处：《光电子．激光》2014年第5期870-875,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61204080);陕西省教育厅科研计划(2013JK1111);西安工程大学博士科研启动基金(BS1128);陕西省普通高校重点学科建设专项资金((2008)169)资助项目

摘　　要：在微纳米PIN电光调制器的基础上,分析了载流子浓度对其调制特性的影响。根据注入调制区载流子平均浓度随时间变化关系,采用在驱动信号中加入正反向预加重电压的调制电压方式,不仅可以提高注入载流子浓度,而且可以缩短反向抽取载流子所用的时间,从而有效提高电光调制器的调制速度;详细分析了PIN电光调制器结构中内脊高度H、外脊高度h,波导脊宽W以及重掺杂区到波导的距离Ws等参数对其调制特性的影响;最终根据数据的分析,给出了优化后的参数,制作了电光调制器并进行了测试,测试结果验证了文中数据分析的正确性。Based on micro-nano PIN electro-optic modulator,the effects of carrier concentration on modu- lation characteristics are analyzed. The average carrier density injected to the i-region varying with the time is simulated,and the average carrier density increases with the voltage. A modulation voltage mode in drive signal with forward and reverse pre-emphasis voltages is used,according to the relationship be- tween carrier average concentration in injected modulation area and time,in order to obtain higher carri- ers density. This method could not only improve the injected carrier concentration,but also shorten the extraction time required for reverse carriers. Thus this method could effectively enhance modulation speed of the electro-optic modulator. At the same time, the effects of structure parameters on modulation characteristics are also analyzed. The structure parameters are optimized according to data analysis. Fi- nally,the electro-optic modulator is made with these structure parameters, and static test and optical transient response test of the electro-optic modulator are done. The modulation depth is 11.79,3 dB, and the rate is 20 kHz.

关 键 词：光电器件 电光调制器 PIN结构 载流子浓度 

分 类 号：TN256[电子电信—物理电子学] TN252