The micro morphology correction function of a silicon wafer CMP surface  

作　　者：杨昊鹍 刘玉岭 孙鸣 李英的 

机构地区：[1]Institute of Microelectronics, Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第5期17-20,共4页半导体学报（英文版）

基　　金：supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the Tianjin Natural Science Foundation of China(No.10JCZDJC15500);the National Natural Science Foundation of China(No.10676008);the Fund Project of Hebei Provincial Department of Education(No.2011128)

摘　　要：The oxidation induced stacking faults （OISFs） exposed on the surface of polished silicon substrate are harmful to the electrical performance and reliability of the device region located on the wafer surface. This work investigates the characteristics of the novel nano colloidal silica alkaline slurry, including polyamine and complex non-ions surface surfactant. The experimental results show that when the pH value is higher than 10.1, the removal rate can be higher than 750 nm/min and the surface roughness can be lower than 0.3 nm （10 × 10 μ2）. The surface OISFs existing on the wafer are efficiently controlled with the slurry, and the defect density on the polished wafer surface decreases greatly as well.The oxidation induced stacking faults （OISFs） exposed on the surface of polished silicon substrate are harmful to the electrical performance and reliability of the device region located on the wafer surface. This work investigates the characteristics of the novel nano colloidal silica alkaline slurry, including polyamine and complex non-ions surface surfactant. The experimental results show that when the pH value is higher than 10.1, the removal rate can be higher than 750 nm/min and the surface roughness can be lower than 0.3 nm （10 × 10 μ2）. The surface OISFs existing on the wafer are efficiently controlled with the slurry, and the defect density on the polished wafer surface decreases greatly as well.

关 键 词：SILICON oxidation induced stacking fault chemical mechanical polishing defect density 

分 类 号：TN304.12[电子电信—物理电子学] TQ423.2[化学工程]