1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination  

作　　者：陈思哲 盛况 王珏 

机构地区：[1]College of Electrical Engineering, Zhejiang University [2]Intersil Corp.

出　　处：《Journal of Semiconductors》2014年第5期32-35,共4页半导体学报（英文版）

基　　金：supported by the National High Technology Research and Development Program of China(No.2011AA050401);the Project of State Grid Corporation of China(No.SGRIDGKJ[2013]210)

摘　　要：This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.This paper presents the design and fabrication of an effective, robust and process-tolerant floating guard ring termination on high voltage 4H-SiC PiN diodes. Different design factors were studied by numerical simulations and evaluated by device fabrication and measurement. The device fabrication was based on a 12 μm thick drift layer with an N-type doping concentration of 8 × 10^15 cm^-3. P^＋ regions in the termination structure and anode layer were formed by multiple aluminum implantations. The fabricated devices present a highest breakdown voltage of 1.4 kV, which is higher than the simulated value. For the fabricated 15 diodes in one chip, all of them exceeded the breakdown voltage of 1 kV and six of them reached the desired breakdown value of 1.2 kV.

关 键 词：silicon carbide PiN diode field guarding rings edge termination 

分 类 号：TN31[电子电信—物理电子学]